MOSFET3 Semi-Conductors Electronic Parts

Power MOS Field Effect Transistor
NTE
Type
Number
Description
and
Application
Case
Style
Drain to
Source
Breakdown
Voltage
(Volts)
Gate to
Source
Cutoff
Voltage
(Volts)
Gate to
Source
Breakdown
Voltage
(Volts)
Maximum
Continuous
Drain
Current
(Amps)
Static
Drain to
on Source
Resistance
(Ohms)
Input
Capacitance
(pf)
Forward
Transcon-
ductance
(mhos)
Device
Total Power
Dissipation
@TC=25°C
(Watts)
BVDSSVgs(Off)BVGSSIDrDS(On)CissgfsPD
2390
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO22060 Min4.5 Max±20 Max120.2 Max400 Max4 Min75 Max
td(off) = 80ns, td(on) = 60ns, tf = 110ns, tr = 160ns
2392
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3100 Min4 Max±20 Max330.08 Max3000 Max9 Min150 Max
td(off) = 125ns, td(on) = 35ns, tf = 100ns, tr = 100ns
2393
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3P500 Min4 Max±20 Max90.7 Max1900 Max5 Min150 Max
td(off) = 170ns, td(on) = 40ns, tf = 40ns, tr = 60ns
2394
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO3P500 Min4 Max±20 Max140.4 Max3000 Max9.3 Min180 Max
td(off) = 150ns, td(on) = 35ns, tf = 70ns, tr = 50ns
2395
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO22060 Min4 Max±20 Max500.028 Max1900 Max15 Min150 Max
td(off) = 45ns, td(on) = 14ns, tf = 92ns, tr = 110ns
2396
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220100 Min4 Max±20 Max280.077 Max1300 Typ5.8 Min150 Max
td(off) = 40ns, td(on) = 13ns, tf = 48ns, tr = 77ns
2397N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220400 Min4 Max±20 Max100.55 Max1400 Typ5.8 Min125 Max
td(off) = 50ns, td(on) = 14ns, tf = 24ns, tr = 27ns
2398
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220500 Min4 Max±20 Max4.51.5 Max610 Typ2.5 Min74 Max
td(off) = 42ns, td(on) = 82ns, tf = 16ns, tr = 16ns
2399
N-CHANNEL
Enhancement
Mode High
Speed Switch
TO2201000 Min4 Max±20 Max3.15 Max980 Typ2.1 Min125 Max
td(off) = 89ns, td(on) = 12ns, tf = 29ns, tr = 25ns

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