NTE3027
Infrared Emitting Diode
High Speed for Remote Control

Description:

The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package.

Features:

Applications:

Infrared remote control and fre air transmission systems with low forward volatge and comfortable radiation and angle requirements in combination with PIN photodiodes or phototransistors.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR     5V
Forward Current, IF
            Continuous
            Peak (Note 1)		     150mA
300mA
Surge Forward Current (Note 2), IFSM     2.5A
Power Dissipation, PD     210mW
Junction Temperature, TJ     +100°C
Operating Temperature Range, Topr     -55° to +100°C
Storage Temperature Range, Tstg     -55° to +100°C
Lead Temperature (During Soldering, t </= 5sec, 2mm from case), TL     +260°C
Thermal Resistance, Junction-to-Ambient, RthJA     375K/W

Note 1.tp = 100µs, tp / T = 0.5.
Note 2.tp = 100µs

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage VF IF = 100mA, tp = 20ms - 1.3 1.7 V
IF = 1.5A, tp = 100µs - 2.2 3.4 V
Temperature Coefficient of Forward Voltage   IF = 100mA - -1.3 - mV / °C
Reverse Current IR VR = 5V - - 100 µA
Junction Capacitance Cj VR = 0, f = 1MHz, E = 0 - 30 - pF
Radient Intensity Ie IF = 100mA, tp = 20ms 10 17 - mW / sr
IF = 1.5A, tp = 100µs 85 160 - mW / sr
Angle of Half Intensity     - ±22 - deg
Radient Power   IF = 100mA, tp = 20ms - 14 - mW
Temperature Coefficient of Radient Power   IF = 20mA - -0.8 - % / °C
Peak Wavelength   IF = 100mA - 950 - nm
Temperature Coefficient of Peak Wavelength   IF = 100mA - 0.2 - nm / °C
Spectral Bandwidth   IF = 100mA - 50 - nm
Rise Time tr IF = 100mA - 800 - ns
IF = 1.5A - 400 - ns
Fall Time tf IF = 100mA - 800 - ns
IF = 1.5A - 400 - ns

  Home  Back