NTE3028
Infrared Emitting Diode
PN Gallium Arsenide

Description:

The NTE3028 is designed for applications reqiurung high power output, low drive power, and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for use with silicon detectors.

Features:

Absolute Maximum Ratings:
Reverse Voltage, VR     6V
Forward Current, IF
            Continuous
            Peak (PW = 100µs, Duty Cycle = 2%)		     60mA
1.0A
Total Device Dissipation (TA = +25°C), PD     250mW
            Derate Above 25°C (Note 1)     2.27mW/°C
Operating Temperature Range, TA     -55° to +125°C
Storage Temperature Range, Tstg     -65° to +150°C

Note 1.Printed circuit board mounting.

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Leakage Current IR VR = 3V - 2 - nA
Reverse Breakdown Voltage V(BR)R IR = 100µA 6 20 - V
Forward Voltage VF IF = 50mA - 1.32 1.5 V
Total Capacitance CT VR = 0V, f = 1MHz - 18 - pF
Total Output Power PO IF = 60mA, Note 2 - 2.5 - mW
IF = 100mA, Note 2, Note 3 1.0 4.0 - mW
Radient Intensity IO IF = 100mA, Note 2, Note 3 - 1.5 - mW / steradian
Peak Emission Wavelength     - 940 - nm
Spectral Line half Width     - 40 - nm

Note 2.Power Output, PO, is the total power radiated by the device into a solid angle of 2(3.1416) steradians. It is measured by directing all rediation leaving the device, within this solid angle, onto a calibrated silicon solar cell.
Note 3.PW = 100µs, Duty Cycle = 2%.
Note 4.Irradiance from a Light Emitting Diode (LED) can be calculated by:

      H = Ie / d2

where:
H is irradiance in mW/cm2
Ie is radient intensity in mW/steradian
d2 is distance from LED to the detector in cm

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