NTE3029A
Infrared-Emitting Diode

Description:

The NTE3029A 940nm LED is a multi-purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and log lifetime.

Features:

Applications:

  • Low Bit Rate Communication Systems
  • Keyboards
  • Coin Handlers
  • Paper Handlers
  • Touch Screens
  • Shaft Encoders
  • General Purpose Interruptive and Reflective Event Sensors

Absolute Maximum Ratings:
Reverse Breakdown Voltage, VR     6V
Forward Current, IF
            Continuous
            Peak Pulse		     100mA
1A
Device Power Dissipation (TA = +25°C, Note 1), PD     100mW
            Derate Above +55°C     2mW/°C
Operating Ambient Temperature Range, Topr     -40° to +100°C
Storage Temperature Range, Tstg     -40° to +100°C
Lead Temperature (During Soldering, Note 2), TL     +260°C

Note 1.Measured with device soldered into a typical printed cirfcuit board.
Note 2.Maximum exposure time:  5sec. Minimum of 1/16 inch from the case. A heat sink should be applied in order to prevent that case temperature from exceeding +100°C.

Electrical Characteristics: (TA = 0mA°C to +70°C, Note 1 unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Leakage Current IR VR = 6V - 0.05 100 µA
Forward Voltage VF IF = 50mA - 1.3 1.5 V
Temperature Coefficient of Forward Voltage     - -1.6 - mV / °C
Capacitance C V = 0V, f = 1MHz - 24 50 pF
Peak Emission Wavelenght   IF = 50mA 930 940 950 nm
Spectral Half Power Wavelenght     - 48 - nm
Spectral Output Temperature Shift     - 0.3 - nm / °C
Axial Power Output Intensity PO IF = 20mA, Note 3 50 150 - µW / sq. cm
Intensity Per Unit Solid Angle Ee IF = 20mA, Note 3 0.2 0.65 - mW / Sr
Power Half-Angle     - ±20 - °
Rise Time and Fall Time tr, tf   - 1.0 - µs

Note 3.measured using a 11.28mm diameter detector placed 21mm away from the device under test.

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