NTE3099
Infrared Emitting Diode
Bi-Directional

Features:

Applications:

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation, PD     75mW
Forward Current, IF     50mA
Peak Forward Current (Note 1), IFM     1A
Reverse Voltage, VR     6V
Operating Junction Temperature Range, Topr     -25° to +85°C
Storage Temperature Range, Tstg     -40° to +85°C
Lead Temperature (During Soldering, Note 2), TL     +260°C

Note 1.Pulse Width </= 100µs, Duty Ratio = 0.01.
Note 2.For 3 seconds at a distance of 2.5mm from the bottom face of the resin package.

Electro-Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage VF IF = 20mA - 1.2 1.4 V
Peak Forward Voltage VFM IFM = 500mA - 3.0 4.0 V
Reverse Current IR VR = 3V - - 10 µA
Terminal Capacitance Ct V = 0V, f = 1MHz - 50 100 pF
Radient Flux   IF = 20mA 0.7 1.0 2.0 mW
Peak Emission Wavelength   IF = 5mA - 950 - nm
Half Intensity Wavelength   IF = 5mA - 45 - nm

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