NTE555
Silicon PIN Diode
UHF/VHF Detector

Description:

The NTE555 is designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications.

Features:

Absolute Maximum Ratings: (TJ = +25°C unless otherwise specified)
Reverse Voltage, VR     50V
Forward Power Dissipation (TA = +25°C), PF     400mW
            Derate Above 25°C     4mW/°C
Operating Junction Temperature Range, TJ     -55° to +125°C
Storage Temperature Range, Tstg     -65° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwisze specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = 10µA 50 - - V
Reverse Leakage Current IR VR = 25V - 7 200 nA
Forward Voltage VF IF = 10mA - 1.0 1.2 V
Diode Capacitance CT VR = 20V, f = 1MHz - 0.48 1.0 pF
Case Capacitance CC f = 1MHz - 0.1 - pF
Minority Carrier Lifetime r IF = 5mA, Krakauer Method - 15 100 ps

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