NTE629 & NTE630
Silicon Rectifier
Fast Recovery, Dual, Center Tap

Description:

The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference.

Features:

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM
            NTE629
            NTE630		     200V
600V
Working Peak Reverse Voltage, VRWM
            NTE629
            NTE630		     200V
600V
DC Blocking Voltage, VR
            NTE629
            NTE630		     200V
600V
RMS Reverse Voltage, VR(RMS)
            NTE629
            NTE630		     140V
420V
Average Rectifier Forward Current (Rated VR, TC = +150°C), IF(AV)
            Per Diode
            Total Device		     8A
16A
Non-Repetitive Peak Surge Current, IFSM      
            (8.3ms Single Half Sine-Wave Superimposed on Rated Load)     250A
Operating Junction Temperature Range (Reverse Voltage Applied), TJ     -65° to +175°C
Storage Temperature Range (Reverse Voltage Applied), Tstg     -65° to +175°C

Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Instantaneous Forward Voltage VF IF = 8A - - 1.3 V
Instantaneous Reverse Current IR At Rated VR, TC = +25°C - - 10 µA
At Rated VR, TC = +100°C - - 250 µA
Junction Capacitance CP VR = 4V, f = 1MHz - 50 - pF
Reverse Recovery Time NTE629 trr IF = 0.5A, IR = 1A, irr = 0.25A - - 150 ns
NTE630 - - 250 ns

  Home  Back